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BFP640FESDE6327XT

  •  BFP640FESDE6327XT
  • image of 射频双极性结型晶体管 BFP640FESDE6327XT
BFP640FESDE6327XT
RF BJT Transistors
Infineon
BFP640FESDE6327
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YES
TYPEDESCRIPTION
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 4.8
Maximum Collector-Emitter Voltage (V) 4.1
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum DC Collector Current (A) 0.05
Maximum DC Collector Current Range (A) 0.001 to 0.06
Minimum DC Current Gain 110@30mA@3V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 200
Maximum Transition Frequency (MHz) 46000(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.55
Package Width 0.8
Package Length 1.4
PCB changed 4
Standard Package Name TSFP
Supplier Package TSFP
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 4
Configuration Single Dual Emitter
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 Orignal genuine       Each chip comes from the original factory


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Original stockBom DistributioAffordable Price

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