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BFP720H6327XTSA1

  •  BFP720H6327XTSA1
  • image of 射频双极性结型晶体管 BFP720H6327XTSA1
BFP720H6327XTSA1
RF BJT Transistors
Infineon Technologies
BFP720H6327XTSA
-
SC-82A, SOT-343
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON GERMANIUM CARBON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 45GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP720
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE
Power Dissipation 100mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 13mA 3V
Collector Emitter Breakdown Voltage 4.7V
Gain 10.5dB ~ 28.5dB
Transition Frequency 45000MHz
Max Breakdown Voltage 4.7V
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Noise Figure (dB Typ @ f) 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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