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BFR505,215

  •  BFR505,215
  • image of 射频双极性结型晶体管 BFR505,215
BFR505,215
RF BJT Transistors
NXP USA Inc.
BFR505,215 data
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TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE, HIGH RELIABILITY
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFR505
Pin Count 3
Reference Standard CECC
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 6V
JEDEC-95 Code TO-236AB
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 18mA
Transition Frequency 9000MHz
Frequency - Transition 9GHz
Power Dissipation-Max (Abs) 0.15W
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 1.2dB ~ 2.1dB @ 900MHz
Power Dissipation Ambient-Max 0.15W
RoHS Status ROHS3 Compliant
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