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BFR520,215

  •  BFR520,215
  • image of 射频双极性结型晶体管 BFR520,215
BFR520,215
RF BJT Transistors
NXP USA Inc.
BFR520,215 data
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE, HIGH RELIABILITY
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFR520
Pin Count 3
Reference Standard CECC
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 300mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA 6V
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 70mA
Transition Frequency 9000MHz
Frequency - Transition 9GHz
Power Dissipation-Max (Abs) 0.3W
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 1.1dB ~ 2.1dB @ 900MHz
Power Dissipation Ambient-Max 0.3W
RoHS Status ROHS3 Compliant
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Original stockBom DistributioAffordable Price

1

1.084416

1.084416

10

1.0236

10.236

100

0.964528

96.4528

500

0.917102

458.551

1000

0.861228

861.228

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