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BFS17SH6327XTSA1

  •  BFS17SH6327XTSA1
  • image of 射频双极性结型晶体管 BFS17SH6327XTSA1
BFS17SH6327XTSA1
RF BJT Transistors
Infineon Technologies
BFS17SH6327XTSA
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6-VSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 280mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 2.5GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFS17
Number of Elements 2
Polarity NPN
Power Dissipation 280mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA 1V
Collector Emitter Breakdown Voltage 15V
Transition Frequency 2500MHz
Frequency - Transition 1.4GHz
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 2.5V
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 800MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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