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BFS481E6327XT

  •  BFS481E6327XT
  • image of 射频双极性结型晶体管 BFS481E6327XT
BFS481E6327XT
RF BJT Transistors
Infineon
BFS481E6327XT d
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YES
TYPEDESCRIPTION
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 2
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 12
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 2
Maximum DC Collector Current (A) 0.02
Maximum DC Collector Current Range (A) 0.001 to 0.06
Maximum Emitter Cut-Off Current (nA) 1000
Maximum Collector Cut-Off Current (nA) 100
Operational Bias Conditions 8V/5mA
Minimum DC Current Gain 70@5mA@8V
Minimum DC Current Gain Range 50 to 120
Typical Input Capacitance (pF) 0.4
Typical Output Capacitance (pF) 0.23
Maximum Power Dissipation (mW) 175
Typical Power Gain (dB) 20
Maximum Transition Frequency (MHz) 8000(Typ)
Maximum Noise Figure (dB) 1.2(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Mounting Surface Mount
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 6
Standard Package Name SOT
Supplier Package SOT-363
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 6
Configuration Dual
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