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BFU530AVL

  •  BFU530AVL
  • image of 射频双极性结型晶体管 BFU530AVL
BFU530AVL
RF BJT Transistors
NXP USA Inc.
BFU530AVL datas
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TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW NOISE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFU530
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 450mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 8V
JEDEC-95 Code TO-236AB
Gain 12dB
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 40mA
Transition Frequency 11000MHz
Frequency - Transition 11GHz
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz
RoHS Status ROHS3 Compliant
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