+86 19924921798

BFU530R

  •  BFU530R
  • image of 射频双极性结型晶体管 BFU530R
BFU530R
RF BJT Transistors
NXP USA Inc.
BFU530R datashe
-
TO-253-4, TO-253AA
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BFU530
Pin Count 4
Power - Max 450mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 8V
Gain 21.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 40mA
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 0.6dB @ 900MHz
RoHS Status ROHS3 Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

captcha

+86-755-82760106

ruizhengwei@gmail.com
0