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MT3S20TU(TE85L)

  •  MT3S20TU(TE85L)
  • image of 射频双极性结型晶体管 MT3S20TU(TE85L)
MT3S20TU(TE85L)
RF BJT Transistors
Toshiba Semiconductor and Storage
MT3S20TU(TE85L)
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3-SMD, Flat Lead
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 900mW
Reach Compliance Code unknown
Element Configuration Single
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Collector Emitter Breakdown Voltage 12V
Gain 12dB
Transition Frequency 5000MHz
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 80mA
Noise Figure (dB Typ @ f) 1.45dB @ 20mA, 5V
RoHS Status RoHS Compliant
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 Orignal genuine       Each chip comes from the original factory


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Original stockBom DistributioAffordable Price

1

6.8604

6.8604

10

6.476226

64.76226

100

6.103044

610.3044

500

5.76023

2880.115

1000

5.437198

5437.198

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