Infineon Technologies
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ESD252B1W01005E6327XTSA1 | Infineon | - | - | TVS DIODES - Tape and Reel (Alt: ESD252B1W01005E6327XTSA1) | 0.0758 | ||
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ESD8V0C1B02LRHE6327XTSA1 | Infineon | - | Available stock | TVS DIODES - Tape and Reel (Alt: ESD8V0C1B02LRHE6327XTSA1) | market price | ||
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ESD101B102ELSE6327XTSA1 | Infineon | - | 0201 (0603 Metric) | dynamic resistance: RDYN = 1.5 (typical) Pb-free and halogen-free package (RoHS compliant) | Target Applications: RF antenna Super high speed interfaces such as USB 3.0, HDMI 1.4a, MHL | 0.1172 | ||
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ESD203B102ELSE6327XTSA1 | Infineon | - | TSSLP-2-4 | ): 30 kV (air/contact discharge) - IEC61000-4-4 (EFT): 50 A (5/50 ns) - IEC61000-4-5 (Surge): 5A (8/20 s); Bi-directional, working voltage up to VRWM | 0.145 | ||
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ESD234B1W0201E6327XTSA1 | Infineon | - | WLL-2-1 | ESD Suppressor TVS Single Bi-Dir ±[email protected] Gap/±[email protected] Disc 2-Pin WLL-2-1 T/R | market price | ||
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ESD259B1W0201E6327XTSA1 | Infineon | - | WLL-2-3 | Esd Protection Diode, Wll-2-3; Clamping Voltage Vc Max:27V; Diode Case Style:wll-2-3; No. Of Pins:2Pins; Operating Voltage:-; Power Dissipation Pd | 0.139 | ||
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ESD103B102ELSE6327XTSA1 | Infineon | - | TSSLP-2-4 | voltage: VCL= 48 V at IPP = 16 A (typical) Very low dynamic resistance: RDYN = 1.8 (typical) Pb-free and halogen-free package (RoHS compliant) | Target Applications: RF antenna Super high speed interfaces such as USB 3.0, HDMI 1.4a, MHL | 0.145 | ||
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ESD112B102ELSE6327XTSA1 | Infineon | - | 0201 (0603 Metric) | ; Extremely low capacitance: CL = 0.2 pF (typical); Low clamping voltage: VCL = 29 V at IPP = 16 A (typical); Very low reverse current IR < 1 nA typ.; Very | 0.117 | ||
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IPB180N04S4L01ATMA1 | Infineon | - | TO-263-7, D²Pak (6 Leads + Tab) | Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | 3.1768 | ||
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IPP120N08S403AKSA1 | Infineon | - | TO-220-3 | Transistor MOSFET N-CH 80V 120A 3-Pin TO-220 Tube | 5.375 | ||
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XC2020L20F66VAAKXUMA1 | Infineon | - | Available stock | 16 BIT FLASH C11 BCS | market price | ||
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XC2020U8F40VAAKXUMA1 | Infineon | - | Available stock | 16 BIT FLASH C11 BCS | market price | ||
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46DN06 ELEM PR | Infineon | - | Available stock | Diode Gen Purp 600V 5100A | 643.08 | ||
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46DN06 ELEM | Infineon | - | Available stock | Diode Gen Purp 600V 5100A | 588.505 | ||
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BAS3010S02LRHE6327XTSA1 | Infineon | - | SOD-882 | Low VF Schottky Diode | Summary of Features: Reverse voltage: 30 V; Forward current: 1 A; Low forward voltage and smallest package form factor (1.0 x | 0.2443 | ||
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BAS3005A02VH6327XTSA1 | Infineon | - | SC-79, SOD-523 | Diode, Schottky, Aec-Q101, 30V, Sc-79; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(Av):500Ma; Forward | 0.1844 | ||
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BAS3005B02VH6327XTSA1 | Infineon | - | SC-79, SOD-523 | efficiency DC/DC conversion, fast switching, protecting and clamping applications; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | 0.145 | ||
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BAS3007ARPPE6327HTSA1 | Infineon | - | PG-SOT143-4 | DIODE, SCHOTTKY, ARRAY, 30V, SOT143; Diode Type:Schottky; Diode Configuration:Bridge; Repetitive Reverse Voltage Vrrm Max:21V; Forward Current If(AV | 0.3804 | ||
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BAS3010A03WE6327HTSA1 | Infineon | - | SC-76, SOD-323 | Medium Power AF Schottky Diode | Summary of Features: Forward current: 1 A; Reverse voltage: 30 V; Very low forward voltage (typ. 0.41V @ IF = 1A | 0.1989 | ||
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BAS3010B03WE6327HTSA1 | Infineon | - | SC-76, SOD-323 | efficiency DC/DC conversion, fast switching, protection and clamping applications; Pb-free (RoHS compliant) package1); Qualified according AEC Q101 | 0.145 | ||
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BAS4002ARPPE6327HTSA1 | Infineon | - | PG-SOT143-4 | ):200mA; Forward Voltage VF Max:790mV; Forward Surge Current Ifsm Max:2A; Diode Case Style:SOT-143; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:SOT143 | 0.335 | ||
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BAR8902LRHE6327XTSA1 | Infineon | - | SOD-882 | frequencies above 1GHz (typ. 0.19 pF); Low forward resistance (typ. 0.8 @ /F = 10mA); Very low signal distortion; Pb-free (RoHS compliant) package | Target Applications: Wireless Communications; High Speed Data Networks | 0.2239 | ||
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BAR9002ELSE6327XTSA1 | Infineon | - | PG-TSSLP-2-3 | at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF); Low forward resistance (typ. 1.3 @ /F = 3 mA); Improved ON / OFF mode harmonic | 0.1151 | ||
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BAT2402ELSE6327XTSA1 | Infineon | - | PG-TSSLP-2-1 | Diode Schottky 4V 0.11A 2-Pin TSSLP T/R | 1.1779 | ||
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BAR9002ELE6327XTMA1 | Infineon | - | PG-TSLP-2-19 | Pin Diode, 80V, 0.1A, Tslp; Diode Configuration:single; Resistance @ If:0.8Ohm; Breakdown Voltage Vbr:80V; Diode Case Style:tslp-2-19; No. Of Pins:2 | 0.0838 |
