Ruizhengwei Electronics

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AFT20P140-4WGNR3	NXP Semiconductors	-	OM-780G-4L	RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1825	DataSheet	165.18
AFT23S160W02GSR3	NXP Semiconductors	-	NI-780GS-2L	Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V	DataSheet	391.44
AFT09H310-04GSR6	NXP Semiconductors	-	NI-1230S-4 GULL	RF Power Transistor, 920 to 960 MHz, 180 W, Typ Gain in dB is 17.9 @ 920 MHz, 28 V, LDMOS, SOT1806	DataSheet	359.76
A2T07D160W04SR3	NXP Semiconductors	-	NI-780S-4	RF Power Transistor, 716 to 960 MHz, 79 W, Typ Gain in dB is 21.5 @ 803 MHz, 28 V, LDMOS, SOT1826	DataSheet	258.4785
BFP540ESDH6327XTSA1	Infineon	-	SC-82A, SOT-343	); Outstanding Gms = 21.5 dB; Noise Figure F = 0.9 dB; Gold metallization for high reliability; SIEGET 45 - Line; Pb-free (RoHS compliant) package	DataSheet	0.4954
TN0104N3-G-P003	Microchip	-	TO-226-3, TO-92-3 (TO-226AA)	Mosfet, N-channel Enhancement-mode, 40V, 1.8 Ohm 3 TO-92 T/r Rohs Compliant: Yes	DataSheet	1.2605
TN0110N3-G-P002	Microchip	-	TO-92-3	Mosfet, N-channel Enhancement-mode, 100V, 3.0 Ohm 3 TO-92 Rvt/r Rohs Compliant: Yes	DataSheet	1.3639
TP2640LG-G	Microchip	-	8-SOIC (0.154", 3.90mm Width)	MOSFET; P-CHANNEL ENHANCEMENT-MODE; -400V; 15 Ohm8 SOIC 3.90mm(.150in) T/R	DataSheet	2.5426
PXAC261202FCV1R250XTMA1	Infineon Technologies	-	H-37248-4	RF MOSFET Transistors RFP-LD10M	DataSheet	market price
PTFA091503ELV4R0XTMA1	Infineon	-	2-Flatpack, Fin Leads, Flanged	LDMOS FET, High Power RF, 150W, 920-960MHz, H-33288-6 Pkg, T/R 50	DataSheet	market price
IPG20N04S4L07AATMA1	Infineon	-	8-PowerVDFN	for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent	DataSheet	2.3049
IPW65R048CFDAFKSA1	Infineon	-	TO-247-3	650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS	DataSheet	27.265
J108,126	NXP Semiconductors	-	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Trans JFET N-CH 25V 80mA Si 3-Pin SPT Ammo	DataSheet	1.443
LET9045STR	STMicroelectronics	-	PowerSO-10RF (Straight Lead)	45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package	DataSheet	93.755
LET9060STR	STMicroelectronics	-	PowerSO-10RF (Straight Lead)	60W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package	DataSheet	127.841
LP0701LG-G	Microchip	-	8-SOIC (0.154", 3.90mm Width)	Mosfet; P-channel Enhancement-mode; -16.5V; 1.5 OHM8 SOIC 3.90MM(.150IN) T	DataSheet	2.435
LET20045C	STMicroelectronics	-	M243	RF MOSFET Transistors RF PWR trans Ldmost 2.0 GHz N-Ch ENH	DataSheet	238.98
LET9045S	STMicroelectronics	-	Active	45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package	DataSheet	114.395
LET9045F	STMicroelectronics	-	M250	LET9045F Series 960 MHz 108 W 80 V N-Channel RF Power Transistor MOSFET - M-250	DataSheet	199.165
LET9060C	STMicroelectronics	-	M243	Mosfet, Rf, N-Ch, 80V, M243-3; Drain Source Voltage Vds:80V; Continuous Drain Current Id:12A; Power Dissipation Pd:130W; Operating Frequency Min:-; Operating Frequency Max:945Mhz; Rf Transistor Case:-; No. Of Pins:3Pins; Msl:-	DataSheet	238.98
LET9045	STMicroelectronics	-	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package	DataSheet	111.4416
DN2535N3-G-P003	Microchip	-	TO-226-3, TO-92-3 (TO-226AA)	Trans MOSFET N-CH 350V 0.12A 3-Pin TO-92 T/R	DataSheet	1.595
DN2535N3-G-P013	Microchip	-	TO-226-3, TO-92-3 (TO-226AA)	Mosfet, Depletion-Mode, 350V, 25 Ohm / 3 To-92 Ammo	DataSheet	1.595
DN2540N3-G-P003	Microchip	-	TO-226-3, TO-92-3 (TO-226AA)	Mosfet, Depletion-Mode, 400V, 25 Ohm / 3 To-92 T	DataSheet	1.68
UTV040	Microchip	-	55FT	Trans GP BJT NPN 45V 2.5A 3-Pin Case 55FT-2	DataSheet	market price

Someone has searched this part IC Chips and others have searched some relevant parts as the following:

AFT20P140-4WGNR3

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NXP Semiconductors

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OM-780G-4L

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RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1825

AFT23S160W02GSR3

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NXP Semiconductors

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NI-780GS-2L

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Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V

AFT09H310-04GSR6

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NXP Semiconductors

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NI-1230S-4 GULL

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RF Power Transistor, 920 to 960 MHz, 180 W, Typ Gain in dB is 17.9 @ 920 MHz, 28 V, LDMOS, SOT1806

A2T07D160W04SR3

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NXP Semiconductors

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NI-780S-4

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RF Power Transistor, 716 to 960 MHz, 79 W, Typ Gain in dB is 21.5 @ 803 MHz, 28 V, LDMOS, SOT1826

BFP540ESDH6327XTSA1

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Infineon

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SC-82A, SOT-343

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); Outstanding Gms = 21.5 dB; Noise Figure F = 0.9 dB; Gold metallization for high reliability; SIEGET 45 - Line; Pb-free (RoHS compliant) package

TN0104N3-G-P003

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Microchip

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TO-226-3, TO-92-3 (TO-226AA)

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Mosfet, N-channel Enhancement-mode, 40V, 1.8 Ohm 3 TO-92 T/r Rohs Compliant: Yes

TN0110N3-G-P002

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Microchip

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TO-92-3

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Mosfet, N-channel Enhancement-mode, 100V, 3.0 Ohm 3 TO-92 Rvt/r Rohs Compliant: Yes

TP2640LG-G

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Microchip

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8-SOIC (0.154", 3.90mm Width)

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MOSFET; P-CHANNEL ENHANCEMENT-MODE; -400V; 15 Ohm8 SOIC 3.90mm(.150in) T/R

PXAC261202FCV1R250XTMA1

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Infineon Technologies

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H-37248-4

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RF MOSFET Transistors RFP-LD10M

PTFA091503ELV4R0XTMA1

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Infineon

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2-Flatpack, Fin Leads, Flanged

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LDMOS FET, High Power RF, 150W, 920-960MHz, H-33288-6 Pkg, T/R 50

IPG20N04S4L07AATMA1

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Infineon

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8-PowerVDFN

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for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent

IPW65R048CFDAFKSA1

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Infineon

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TO-247-3

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650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS

J108,126

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NXP Semiconductors

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TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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Trans JFET N-CH 25V 80mA Si 3-Pin SPT Ammo

LET9045STR

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STMicroelectronics

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PowerSO-10RF (Straight Lead)

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45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

LET9060STR

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STMicroelectronics

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PowerSO-10RF (Straight Lead)

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60W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

LP0701LG-G

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Microchip

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8-SOIC (0.154", 3.90mm Width)

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Mosfet; P-channel Enhancement-mode; -16.5V; 1.5 OHM8 SOIC 3.90MM(.150IN) T

LET20045C

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STMicroelectronics

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M243

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RF MOSFET Transistors RF PWR trans Ldmost 2.0 GHz N-Ch ENH

LET9045S

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STMicroelectronics

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Active

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45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

LET9045F

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STMicroelectronics

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M250

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LET9045F Series 960 MHz 108 W 80 V N-Channel RF Power Transistor MOSFET - M-250

LET9060C

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STMicroelectronics

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M243

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Mosfet, Rf, N-Ch, 80V, M243-3; Drain Source Voltage Vds:80V; Continuous Drain Current Id:12A; Power Dissipation Pd:130W; Operating Frequency Min:-; Operating Frequency Max:945Mhz; Rf Transistor Case:-; No. Of Pins:3Pins; Msl:-

LET9045

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STMicroelectronics

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PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

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45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

DN2535N3-G-P003

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Microchip

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TO-226-3, TO-92-3 (TO-226AA)

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Trans MOSFET N-CH 350V 0.12A 3-Pin TO-92 T/R

DN2535N3-G-P013

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Microchip

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TO-226-3, TO-92-3 (TO-226AA)

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Mosfet, Depletion-Mode, 350V, 25 Ohm / 3 To-92 Ammo

DN2540N3-G-P003

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Microchip

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TO-226-3, TO-92-3 (TO-226AA)

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Mosfet, Depletion-Mode, 400V, 25 Ohm / 3 To-92 T

UTV040

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Microchip

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55FT

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Trans GP BJT NPN 45V 2.5A 3-Pin Case 55FT-2