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AS1M025120P

  •  AS1M025120P
  • image of Single FETs, MOSFETs AS1M025120P
AS1M025120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
-
Tube
1

1

$38.0300

$38.0300

10

$33.8000

$338.0000

100

$29.5600

$2,956.0000

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Product parameters
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TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Power Dissipation (Max)463W (Tc)
Vgs(th) (Max) @ Id4V @ 15mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 1000 V
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