BY25Q128ESWIG(R) Memory_Motor driven IC_ Logic general IC_ Power IC_ Single chip microcomputer_ Optocoupler_ Sensor_ Diode triode_Ruizhengwei electronics

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BY25Q128ESWIG(R)


：	BY25Q128ESWIG(R)
：	Memory
：	BYTe Semiconductor
：	128 MBIT, 3.0V
：	-
：	Tape & Reel (TR)
：	1

1

$1.5700

$1.5700

10

$1.4000

$14.0000

25

$1.3300

$33.2500

100

$1.0900

$109.0000

250

$1.0200

$255.0000

500

$0.9000

$450.0000

1000

$0.7100

$710.0000

3000

$0.6700

$2,010.0000

6000

$0.6300

$3,780.0000

15000

$0.6100

$9,150.0000

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Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	BYTe Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-WDFN Exposed Pad
Mounting Type	Surface Mount
Memory Size	128Mbit
Memory Type	Non-Volatile
Operating Temperature	-40°C ~ 85°C (TA)
Voltage - Supply	2.7V ~ 3.6V
Technology	FLASH - NOR (SLC)
Clock Frequency	120 MHz
Memory Format	FLASH
Supplier Device Package	8-WSON (5x6)
Write Cycle Time - Word, Page	60µs, 2.4ms
Memory Interface	SPI - Quad I/O
Access Time	7.5 ns
Memory Organization	16M x 8

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