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G3R75MT12K

  •  G3R75MT12K
  •  G3R75MT12K
  • image of Single FETs, MOSFETs G3R75MT12K
  • image of Single FETs, MOSFETs G3R75MT12K
G3R75MT12K
Single FETs, MOSFETs
GeneSiC Semiconductor
SIC MOSFET N-CH
-
Tube
1

1

$10.7700

$10.7700

10

$9.7100

$97.1000

25

$9.3100

$232.7500

100

$8.7500

$875.0000

250

$8.3900

$2,097.5000

500

$8.1400

$4,070.0000

1000

$7.8900

$7,890.0000

Obtain quotation information
G3R75MT12J
基因碳化硅-GeneSiC
SiC MOSFET
G3R75MT12K
基因碳化硅-GeneSiC
SiC MOSFET
G3R75MT12D
基因碳化硅-GeneSiC
SiC MOSFET
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrGeneSiC Semiconductor
SeriesG3R™
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Rds On (Max) @ Id, Vgs90mOhm @ 20A, 15V
Power Dissipation (Max)207W (Tc)
Vgs(th) (Max) @ Id2.69V @ 7.5mA
Supplier Device PackageTO-247-4
Drive Voltage (Max Rds On, Min Rds On)15V
Vgs (Max)+22V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1560 pF @ 800 V
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