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GC20N65F

  •  GC20N65F
  • image of Single FETs, MOSFETs GC20N65F
GC20N65F
Single FETs, MOSFETs
Goford Semiconductor
N650V,RD(MAX)<1
-
Tube
1

1

$2.7000

$2.7000

10

$2.2700

$22.7000

100

$1.8400

$184.0000

500

$1.6300

$815.0000

1000

$1.4000

$1,400.0000

2000

$1.3200

$2,640.0000

5000

$1.2600

$6,300.0000

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Product parameters
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TYPEDESCRIPTION
MfrGoford Semiconductor
SeriesCool MOS™
PackageTube
Product StatusACTIVE
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Power Dissipation (Max)40W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1724 pF @ 100 V
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