GT52N10T Single FETs, MOSFETs_Motor driven IC_ Logic general IC_ Power IC_ Single chip microcomputer_ Optocoupler_ Sensor_ Diode triode

$1.6700

$1.3900

$13.9000

100

$1.1000

$110.0000

500

$0.9300

$465.0000

1000

$0.7900

$790.0000

2000

$0.7500

$1,500.0000

5000

$0.7200

$3,600.0000

10000

$0.7000

$7,000.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	SGT
Package	Tube
Product Status	ACTIVE
Package / Case	TO-220-3 Full Pack
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Power Dissipation (Max)	100W (Tc)
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-220
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2626 pF @ 50 V

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