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HN1B04FE-GR,LXHF

  •  HN1B04FE-GR,LXHF
  • image of Bipolar Transistor Arrays HN1B04FE-GR,LXHF
HN1B04FE-GR,LXHF
Bipolar Transistor Arrays
Toshiba Electronic Devices and Storage Corporation
AUTO AEC-Q PNP
-
Tape & Reel (TR)

1

$0.4400

$0.4400

10

$0.3800

$3.8000

100

$0.2600

$26.0000

500

$0.2100

$105.0000

1000

$0.1700

$170.0000

2000

$0.1500

$300.0000

4000

$0.1500

$600.0000

8000

$0.1400

$1,120.0000

12000

$0.1300

$1,560.0000

28000

$0.1300

$3,640.0000

Obtain quotation information
HN1B04FE
东芝-Toshiba
Transistor for low frequency small-signal amplification 2 in 1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature150°C (TJ)
Power - Max100mW
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Frequency - Transition80MHz
Supplier Device PackageES6
GradeAutomotive
QualificationAEC-Q101
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