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IRFBF30S

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IRFBF30S
Single FETs, MOSFETs
Vishay / Siliconix
MOSFET N-CH 900
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Tube
Product parameters
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TYPEDESCRIPTION
MfrVishay / Siliconix
Series-
PackageTube
Product StatusOBSOLETE
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Rds On (Max) @ Id, Vgs3.7Ohm @ 2.2A, 10V
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V
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