K6F2016U4E-EF70T Memory_Motor driven IC_ Logic general IC_ Power IC_ Single chip microcomputer_ Optocoupler_ Sensor_ Diode triode_Ruizhengwei electronics

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K6F2016U4E-EF70T


：	K6F2016U4E-EF70T
：	Memory
：	Samsung Semiconductor
：	SRAM ASYNC SLOW
：	-
：	Tape & Reel (TR)
：

100

$1.6000

$160.0000

500

$1.4500

$725.0000

2000

$1.3000

$2,600.0000

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Product parameters

TYPE	DESCRIPTION
Mfr	Samsung Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	OBSOLETE
Mounting Type	Surface Mount
Memory Size	2Mbit
Memory Type	Volatile
Operating Temperature	-40°C ~ 85°C (TA)
Voltage - Supply	2.7V ~ 3.6V
Technology	SRAM - Asynchronous
Memory Format	SRAM
Supplier Device Package	48-TFBGA (6x7)
Write Cycle Time - Word, Page	70ns
Memory Interface	Parallel
Memory Organization	128K x 16
DigiKey Programmable	Not Verified

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+86-755-82760106

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