K6R1008C1D-TC10 Memory_Motor driven IC_ Logic general IC_ Power IC_ Single chip microcomputer_ Optocoupler_ Sensor_ Diode triode_Ruizhengwei electronics

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K6R1008C1D-TC10


：	K6R1008C1D-TC10
：	Memory
：	Samsung Semiconductor
：	SRAM ASYNC FAST
：	-
：	Tube
：

100

$1.6000

$160.0000

1000

$1.5000

$1,500.0000

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Product parameters

TYPE	DESCRIPTION
Mfr	Samsung Semiconductor
Series	-
Package	Tube
Product Status	OBSOLETE
Mounting Type	Surface Mount
Memory Size	1Mbit
Memory Type	Volatile
Operating Temperature	0°C ~ 70°C (TA)
Voltage - Supply	5V
Technology	SRAM - Asynchronous
Memory Format	SRAM
Supplier Device Package	32-TSOP II
Write Cycle Time - Word, Page	10ns
Memory Interface	Parallel
Memory Organization	128K x 8
DigiKey Programmable	Not Verified

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+86-755-82760106

sale@ruizhengwei.com