K6X1008C2D-TF55 Memory_Motor driven IC_ Logic general IC_ Power IC_ Single chip microcomputer_ Optocoupler_ Sensor_ Diode triode_Ruizhengwei electronics

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K6X1008C2D-TF55


：	K6X1008C2D-TF55
：	Memory
：	Samsung Semiconductor
：	SRAM ASYNC SLOW
：	-
：	Tray
：

100

$2.7500

$275.0000

500

$2.5000

$1,250.0000

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Product parameters

TYPE	DESCRIPTION
Mfr	Samsung Semiconductor
Series	-
Package	Tray
Product Status	OBSOLETE
Mounting Type	Surface Mount
Memory Size	1Mbit
Memory Type	Volatile
Operating Temperature	-40°C ~ 85°C (TA)
Voltage - Supply	4.5V ~ 5.5V
Technology	SRAM - Asynchronous
Memory Format	SRAM
Supplier Device Package	32-TSOP REVERSE
Write Cycle Time - Word, Page	55ns
Memory Interface	Parallel
Memory Organization	128K x 8
DigiKey Programmable	Not Verified

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