SIHB6N80AE-GE3 Single FETs, MOSFETs_Motor driven IC_ Logic general IC_ Power IC_ Single chip microcomputer_ Optocoupler_ Sensor_ Diode triode

$1.9900

$1.6000

$80.0000

100

$1.3200

$132.0000

500

$1.1100

$555.0000

1000

$0.9500

$950.0000

2000

$0.9000

$1,800.0000

5000

$0.8600

$4,300.0000

10000

$0.8400

$8,400.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Vishay / Siliconix
Series	E
Package	Tube
Product Status	ACTIVE
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Rds On (Max) @ Id, Vgs	950mOhm @ 2A, 10V
Power Dissipation (Max)	62.5W (Tc)
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	800 V
Gate Charge (Qg) (Max) @ Vgs	22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	422 pF @ 100 V

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