SIHK085N60EF-T1GE3 Single FETs, MOSFETs_Motor driven IC_ Logic general IC_ Power IC_ Single chip microcomputer_ Optocoupler_ Sensor_ Diode triode

$6.8800

$5.9000

$59.0000

100

$4.9100

$491.0000

500

$4.3400

$2,170.0000

1000

$3.9000

$3,900.0000

2000

$3.6600

$7,320.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Vishay / Siliconix
Series	EF
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerBSFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Rds On (Max) @ Id, Vgs	85mOhm @ 17A, 10V
Power Dissipation (Max)	184W (Tc)
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2733 pF @ 100 V

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