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TP65H050WS

  •  TP65H050WS
  • image of Single FETs, MOSFETs TP65H050WS
TP65H050WS
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
-
Tube
1

1

$17.6700

$17.6700

30

$14.3000

$429.0000

120

$13.4600

$1,615.2000

510

$12.2000

$6,222.0000

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Product parameters
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TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Cascode Gallium Nitride FET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)119W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V
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