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1N4007C.B.O.

  •  1N4007C.B.O.
  • image of Single Diodes 1N4007C.B.O.
1N4007C.B.O.
Single Diodes
EIC Semiconductor, Inc.
DIODE GEN PURP
-
Bag
1

5000

$0.1300

$650.0000

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Product parameters
TYPEDESCRIPTION
MfrEIC Semiconductor, Inc.
Series-
PackageBag
Product StatusACTIVE
Package / CaseDO-204AL, DO-41, Axial
Mounting TypeThrough Hole
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
TechnologyStandard
Capacitance @ Vr, F15pF @ 4V, 1MHz
Current - Average Rectified (Io)1A
Supplier Device PackageDO-41
Operating Temperature - Junction-65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 1 A
Current - Reverse Leakage @ Vr5 µA @ 1000 V
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