Ruizhengwei Electronics

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A2T18S160W31GSR3	NXP Semiconductors	-	NI-780GS-2L2LA	RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1805	DataSheet	281.555
A2T18S162W31GSR3	NXP Semiconductors	-	NI-780GS-2L2LA	Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V	DataSheet	268.415
AFT18S260W31GSR3	NXP Semiconductors	-	NI-780GS-2L2LA	Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg. 28 V, CFM4, RoHS	DataSheet	318.72
AFV09P350-04GNR3	NXP Semiconductors	-	OM-780G-4L	RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825	DataSheet	522.66
A2G22S160-01SR3	NXP Semiconductors	-	NI-400S-2S	RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828	DataSheet	301.98
A2T07H310-24SR6	NXP Semiconductors	-	NI-1230-4LS2L	RF Power Transistor,716 to 960 MHz, 126 W, Typ Gain in dB is 18.9 @ 865 MHz, 28 V, LDMOS, SOT1800		369.085
BFR740L3RHE6327XTSA1	Infineon	-	SC-101, SOT-883	, CATV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifie	DataSheet	0.8011
BFR843EL3E6327XTSA1	Infineon	-	3-XFDFN	: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz; ISM bands up to 10 GHz; Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p	DataSheet	0.54
VP0550N3-G-P013	Microchip Technology	-	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET	DataSheet	2.3617
VN0550N3-G-P013	Microchip	-	TO-92-3	MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 60 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES	DataSheet	2.0605
VN2460N3-G-P014	Microchip	-	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES	DataSheet	1.683
VN0300L-G-P002	Microchip	-	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V, 1.2 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES	DataSheet	1.6155
VRF157FLMP	Microchip	-	-	RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2 T2 Box RoHS Compliant: Yes	DataSheet	1510.68
VND7N04-E	STMicroelectronics	-	TO-252-3, DPak (2 Leads + Tab), SC-63	Current Limit SW 1-IN 1-OUT to 18V 11A Automotive 3-Pin(2+Tab) DPAK Tube	DataSheet	1.7987
TN0620N3-G-P014	Microchip	-	TO-92-3	Mosfet, N-channel Enhancement-mode, 200V, 6.0 Ohm 3 TO-92 Ammo Rohs Compliant: Yes	DataSheet	1.8614
TP2435N8-G	Microchip	-	TO-243AA	MOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES	DataSheet	1.885
PTFA092213ELV4R250XTMA2	Infineon	-	-	LDMOS FET, High Power RF, 220W, 920-960MHz, H-33288-2 Pkg, T/R 250	DataSheet	market price
PTFB192557SHV1R250XTMA1	Infineon	-	H-34288G-4/2	Trans Mosfet N-ch 65V 5-PIN H-34288G-4/2 T	DataSheet	market price
PTFB211803FLV2R0XTMA1	Infineon	-	H-34288-4/2	LDMOS FET, High Power RF, 180W, 2.11-2.17GHz, H-34288-4/2 Pkg, T/R 50	DataSheet	market price
IPG20N06S4L26AATMA1	Infineon	-	8-PowerVDFN	thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes \| Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting	DataSheet	1.02
IPB120N06S402ATMA2	Infineon	-	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS	DataSheet	3.875
IPB180N10S402ATMA1	Infineon	-	TO-263-7, D²Pak (6 Leads + Tab)	Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R	DataSheet	8.075
IPB65R110CFDAATMA1	Infineon	-	D²PAK (TO-263AB)	during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn	DataSheet	9.1215
GTVA220701FAV1R2XTMA1	Infineon Technologies	-	<em class="rohs">Lead free / RoHS Compliant</em>	RF MOSFET Transistors	DataSheet	market price
JTDB75	Microchip	-	55AW	Trans GP BJT NPN 55V 8A 3-Pin Case 55AW	DataSheet	787.715

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A2T18S160W31GSR3

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NXP Semiconductors

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NI-780GS-2L2LA

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RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1805

A2T18S162W31GSR3

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NXP Semiconductors

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NI-780GS-2L2LA

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Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V

AFT18S260W31GSR3

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NXP Semiconductors

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NI-780GS-2L2LA

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Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg. 28 V, CFM4, RoHS

AFV09P350-04GNR3

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NXP Semiconductors

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OM-780G-4L

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RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825

A2G22S160-01SR3

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NXP Semiconductors

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NI-400S-2S

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RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828

A2T07H310-24SR6

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NXP Semiconductors

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NI-1230-4LS2L

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RF Power Transistor,716 to 960 MHz, 126 W, Typ Gain in dB is 18.9 @ 865 MHz, 28 V, LDMOS, SOT1800

BFR740L3RHE6327XTSA1

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Infineon

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SC-101, SOT-883

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, CATV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifie

BFR843EL3E6327XTSA1

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Infineon

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3-XFDFN

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: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz; ISM bands up to 10 GHz; Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p

VP0550N3-G-P013

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Microchip Technology

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TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET

VN0550N3-G-P013

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Microchip

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TO-92-3

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MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 60 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES

VN2460N3-G-P014

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Microchip

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TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES

VN0300L-G-P002

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Microchip

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TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V, 1.2 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES

VRF157FLMP

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Microchip

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RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2 T2 Box RoHS Compliant: Yes

VND7N04-E

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STMicroelectronics

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TO-252-3, DPak (2 Leads + Tab), SC-63

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Current Limit SW 1-IN 1-OUT to 18V 11A Automotive 3-Pin(2+Tab) DPAK Tube

TN0620N3-G-P014

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Microchip

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TO-92-3

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Mosfet, N-channel Enhancement-mode, 200V, 6.0 Ohm 3 TO-92 Ammo Rohs Compliant: Yes

TP2435N8-G

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Microchip

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TO-243AA

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MOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

PTFA092213ELV4R250XTMA2

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Infineon

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LDMOS FET, High Power RF, 220W, 920-960MHz, H-33288-2 Pkg, T/R 250

PTFB192557SHV1R250XTMA1

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Infineon

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H-34288G-4/2

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Trans Mosfet N-ch 65V 5-PIN H-34288G-4/2 T

PTFB211803FLV2R0XTMA1

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Infineon

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H-34288-4/2

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LDMOS FET, High Power RF, 180W, 2.11-2.17GHz, H-34288-4/2 Pkg, T/R 50

IPG20N06S4L26AATMA1

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Infineon

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8-PowerVDFN

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thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting

IPB120N06S402ATMA2

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Infineon

：

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

IPB180N10S402ATMA1

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Infineon

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TO-263-7, D²Pak (6 Leads + Tab)

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Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

IPB65R110CFDAATMA1

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Infineon

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D²PAK (TO-263AB)

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during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn

GTVA220701FAV1R2XTMA1

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Infineon Technologies

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<em class="rohs">Lead free / RoHS Compliant</em>

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RF MOSFET Transistors

JTDB75

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Microchip

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55AW

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Trans GP BJT NPN 55V 8A 3-Pin Case 55AW